Implantation of Silicon Ions into Sapphire: Low Doses
作者： N. E. Belova , S. G. Shemardov , S. S. Fanchenko , E. A. Golovkova , O. A. Kondratev
DOI: 10.1134/S1063782620080060
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摘要: After the ion implantation of silicon into sapphire followed by high-temperature annealing, and aluminosilicate precipitates are observed in surface region sapphire. X-ray measurements with mapping reciprocal space show presence a compressive stress –0.12% strain normal direction, tensile 0.2% R plane this region. This reduces lattice mismatch between Si(100) and, thus, can improve crystal quality epitaxial Si films grown on such modified substrates.
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