Application of ion implantation for the modification of silicon-on-sapphire epitaxial systems, their structure, and properties
作者： P. A. Aleksandrov , K. D. Demakov , S. G. Shemardov , N. E. Belova
DOI: 10.1134/S1027451017040176
关键词:
摘要: Articles devoted to methods for improving the structural quality of epitaxial films, which utilize high-temperature interaction between hydrogen and silicon as well solid-phase recrystallization process, are reviewed. A correlation layer radiation resistance microcircuits obtained thereon is also considered. method creating capture/recombination centers in sapphire during implantation helium ions proposed, yielding high-quality radiation-resistant silicon-on-sapphire films.
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