On the generation of charge-carrier recombination centers in the sapphire substrates of silicon-on-sapphire structures
作者： P. A. Aleksandrov , N. E. Belova , K. D. Demakov , S. G. Shemardov
DOI: 10.1134/S1063782615080023
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摘要: A method for the production of high-quality radiation-resistant silicon-on-sapphire structures through fabrication a layer nanopores in sapphire by helium ion implantation, i.e., creating charge-carrier recombination centers, is proposed. In this case, quality silicon simultaneously improved. The problem thermal stability pores discussed with aim analyzing possibility producing microcircuit on resultant modified sample. possesses large total surface area and, hence, decreases lifetime charge carriers generated during irradiation operating microcircuit. This effect reduces at silicon-sapphire interface and improves radiation resistance.
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