作者: A Dargys , J Kundrotas
DOI: 10.1016/S0038-1101(97)86797-4
关键词:
摘要: A threshold avalanche breakdown field associated with the impact ionization of shallow donors by hot electrons in n-GaAs is calculated from Boltzmann transport equation for various values donor concentration, compensation ratio and lattice temperature. At low moderate concentrations, ND < 1015 cm−3, results are good agreement available experimental data. The curves on presented this paper may be used optimizing operational characteristics impurity-based cryogenic devices, such as far-infrared photomultipliers.