Donor avalanche breakdown field in n-GaAs: Effect of concentration and lattice temperature

作者: A Dargys , J Kundrotas

DOI: 10.1016/S0038-1101(97)86797-4

关键词:

摘要: A threshold avalanche breakdown field associated with the impact ionization of shallow donors by hot electrons in n-GaAs is calculated from Boltzmann transport equation for various values donor concentration, compensation ratio and lattice temperature. At low moderate concentrations, ND < 1015 cm−3, results are good agreement available experimental data. The curves on presented this paper may be used optimizing operational characteristics impurity-based cryogenic devices, such as far-infrared photomultipliers.

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