Brief review of the MOS device physics for low temperature electronics
作者： F. Balestra , G. Ghibaudo
DOI: 10.1016/0038-1101(94)90064-7
关键词:
摘要: Abstract A brief review of the main physical phenomena involved in cryogenic operation CMOS silicon devices down to liquid helium temperature is given. Going from solid state physics towards electrical engineering point views, several aspects such as quantification inversion layer, electronic transport 2D electron or hole gases, scattering mechanisms, impurity freeze-out substrate lightly doped source and drain regions, field-assisted impact ionization phenomena, influence series resistance other parasitic effects (kink effect, hysteresis, transient, …) which alter device characteristics will be discussed. The short channel induced barrier lowering, punch through, velocity overshoot also addressed.
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