Doping of III-nitride materials
作者： Pietro Pampili , Peter J. Parbrook
DOI: 10.1016/J.MSSP.2016.11.006
关键词:
摘要: … status of doping in III-Nitrides concentrating on the specific … n-contact can also be improved by simply making the n-GaN layer thicker. However for AlGaN, due to alloy scattering, typical n…
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