High reliable high power diode for welding applications.
Marco Portesine , Pietro Pampili , Giovanna Sozzi , Paolo Cova
Microelectronics Reliability 44 1437 -1441
2
2004
Influence of Free Radical Surface Activation on Si/SiC Heterogeneous Integration by Direct Wafer Bonding
Karim Cherkaoui , Farzan Gity , Pietro Pampili , P. M. Gammon
joint international eurosoi workshop and international conference on ultimate integration on silicon
2017
Fabrication and characterization of UV-LEDs
Pietro Pampili
University College Cork 217
2019
Reduction of threading dislocation density in top-down fabricated GaN nanocolumns via their lateral overgrowth by MOCVD
Vitaly Z. Zubialevich , Mathew McLaren , Pietro Pampili , John Shen
Journal of Applied Physics 127 ( 2) 025306
1
2020
MHz operation of 250 nm ultra-violet micro-light emitting diodes
Peter J. Parbrook , Pietro Pampili , Mahbub Akhter , Cormac Eason
photonics society summer topical meeting series 173 -174
2015
250-nm emitting LED optimized for optical fibre coupling
Pietro Pampili , Mahbub Akhter , Cormac Eason , Vitaly Z. Zubialevich
photonics society summer topical meeting series 177 -178
1
2015
Thermal Stability of Crystallographic Planes of GaN Nanocolumns and Their Overgrowth by Metal Organic Vapor Phase Epitaxy
Vitaly Z. Zubialevich , Pietro Pampili , Peter J. Parbrook
Crystal Growth & Design 20 ( 6) 3686 -3700
2020
Design considerations of vertical GaN nanowire Schottky barrier diodes
Gourab Sabui , Vitaly Z. Zubialevich , Mary White , Pietro Pampili
international symposium on power semiconductor devices and ic's 191 -194
2017
InAlN-based LEDs emitting in the near-UV region
Pietro Pampili , Vitaly Z. Zubialevich , Pleun Maaskant , Mahbub Akhter
Japanese Journal of Applied Physics 58 1 -10
7
2019
Enhanced UV luminescence from InAlN quantum well structures using two temperature growth
Vitaly Z. Zubialevich , Thomas C. Sadler , Duc V. Dinh , Shahab N. Alam
Journal of Luminescence 155 108 -111
12
2014
Doping of III-nitride materials
Pietro Pampili , Peter J. Parbrook
Materials Science in Semiconductor Processing 62 180 -191
88
2017
Significant contribution from impurity-band transport to the room temperature conductivity of silicon-doped AlGaN
Pietro Pampili , Duc V Dinh , Vitaly Z Zubialevich , Peter J Parbrook
Journal of Physics D 51 ( 6) 1 -6
22
2018
Silicon doping of semipolar (112¯2)AlxGa1−xN(0.50≤x≤0.55)
Duc V. Dinh , Pietro Pampili , Peter J. Parbrook
Journal of Crystal Growth 451 181 -187
9
2016
Fast Growth of Smooth AlN in a 3 × 2″ Showerhead‐Type Vertical Flow MOVPE Reactor
Vitaly Z. Zubialevich , Pietro Pampili , Peter J. Parbrook
Physica Status Solidi B-basic Solid State Physics 255 ( 5) 1700472
1
2018
GaN Nanowire Schottky Barrier Diodes
Gourab Sabui , Vitaly Z. Zubialevich , Mary White , Pietro Pampili
IEEE Transactions on Electron Devices 64 ( 5) 2283 -2290
19
2017
Carrier dynamics near a crack in GaN microwires with AlGaN multiple quantum wells
Sylvain Finot , Vincent Grenier , Vitaly Zubialevich , Catherine Bougerol
Applied Physics Letters 117 ( 22) 221105
2
2020
A systematic comparison of polar and semipolar Si-doped AlGaN alloys with high AlN content
Lucia Spasevski , Gunnar Kusch , Pietro Pampili , Vitaly Z Zubialevich
Journal of Physics D: Applied Physics 54 ( 3) 035302 -035302
10
2020
Simulation study of high voltage vertical GaN nanowire field effect transistors
Gourab Sabui , Vitaly Z Zubialevich , Pietro Pampili , Mary White
ECS Transactions 80 ( 7) 69 -69
8
2017
Semiconductor heterostructure
Vitaly Z Zubialevich , Peter J Parbrook , Pietro Pampili
2023
Significant contribution from impurity-band transport to the room
Pietro Pampili , Duc V Dinh , Vitaly Z Zubialevich , Peter Parbrook
2018