GaN Nanowire Schottky Barrier Diodes

作者: Gourab Sabui , Vitaly Z. Zubialevich , Mary White , Pietro Pampili , Peter J. Parbrook

DOI: 10.1109/TED.2017.2679727

关键词:

摘要: … diodes using 3-D TCAD device simulation. The NW architecture theoretically achieves blocking voltages upward of 700 V with very low specific on-resistance. … Schottky diodes exhibit a …

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