400-A (Pulsed) Vertical GaN p-n Diode With Breakdown Voltage of 700 V
作者： Isik C. Kizilyalli , Andrew P. Edwards , Hui Nie , Phong Bui-Quang , Donald Disney
关键词: Gallium nitride 、 Schottky diode 、 Silicon 、 p–n diode 、 Diode 、 Optoelectronics 、 Breakdown voltage 、 Materials science 、 Power electronics 、 Semiconductor device
摘要: There is a great interest in monolithic GaN semiconductor devices with high current capability for power electronics. In this letter, large area vertical p-n diodes fabricated on bulk substrates are discussed. Diodes areas as 16 ${\rm mm}^{2}$ breakdown voltages exceeding 700 V and pulsed (100 $\mu{\rm s}$ ) currents approaching 400 A reported. This made possible the first time part due to recent availability of improved quality substrates.
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