Vertical power diodes in bulk GaN
作者： Don Disney , Hui Nie , Andrew Edwards , David Bour , Hemal Shah
DOI: 10.1109/ISPSD.2013.6694455
关键词:
摘要: Vertical diodes with breakdown voltages up to 2.6kV have been fabricated on bulk GaN substrates. The measured figures-of-merit of these devices show performance near the theoretical limit GaN. These vertical exhibit robust avalanche behavior a positive temperature coefficient. System-level advantages demonstrated in power conversion applications. Statistical data collected from thousands devices. Initial reliability tests completed.
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