Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures
作者： Shih-Wei Feng , Yung-Chen Cheng , Yi-Yin Chung , C. C. Yang , Yen-Sheng Lin
DOI: 10.1063/1.1506393
关键词:
摘要: Multiple-component decays of photoluminescence (PL) in InGaN/GaN quantum wells have been widely reported. However, their physical interpretations not well discussed yet. Based on wavelength-dependent and temperature-varying time-resolved PL measurements, the mechanism carrier transport among different levels localized states (spatially distributed) such an indium aggregated structure was proposed for interpreting early-stage fast decay, delayed slow rise, extended decay intensity. Three samples same geometry but nominal contents, hence degrees aggregation localization, were compared. The process enhanced with a certain amount thermal energy overcoming potential barriers between spatially distributed minimums. In higher more complicated localization structures led to activities. Free ...
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