InGaN/GaN quantum wells studied by high pressure, variable temperature, and excitation power spectroscopy

摘要: The energies of photo- and electroluminescence transitions in InxGa1−xN quantum wells exhibit a characteristic “blueshift” with increasing pumping power. This effect has been attributed either to band-tail filling, or screening piezoelectric fields. We have studied the pressure temperature behavior radiative recombination InxGa1−xN/GaN x=0.06, 0.10, 0.15. find that, although primarily band-to-band character, excitation-power induced blueshift can be uniquely screening. Calculations field pseudomorphic layers agree very well observed Stokes redshift photoluminescence. coefficients photoluminescence (25–37 meV/GPa) are surprisingly low, and, so far, their magnitude only partially explained.