Efficient radiative recombination from -oriented InxGa1-xN multiple quantum wells fabricated by the regrowth technique

摘要: InxGa1−xN multiple quantum wells (QWs) with [0001], ⟨112¯2⟩, and ⟨112¯0⟩ orientations have been fabricated by means of the regrowth technique on patterned GaN template striped geometry, normal planes which are (0001) {112¯0}, sapphire substrates. It was found that photoluminescence intensity {112¯2} QW is strongest among three QWs, internal efficiency estimated to be as large about 40% at room temperature. The radiative recombination lifetime 0.38ns low temperature, 3.8 times shorter than conventional [0001]-oriented QWs emitting a similar wavelength 400nm. These findings strongly suggest achievement stronger oscillator strength owing suppression piezoelectric fields.