Films of 60/40 PZT by the mod process for memory applications
作者： R. W. Vest , W. Zhu
DOI: 10.1080/00150199108223327
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摘要: Abstract Films of PbZr0.6Ti0.4O3 (60/40 PZT) that were nearly pin hole free with uniform composition and thickness prepared by the metallo-organic decomposition (MOD) process on Pt coated Si wafers. The polarization reversal characteristics important for memory applications studied as a function film annealing conditions. processing conditions not optimized, but switching achieved ± 5 volt pulses both initially after 1010 reversals promising.
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