A carbon nanotube based x-ray detector

摘要: X-ray detectors based on metal-oxide semiconductor field effect transistors couple instantaneous measurement with high accuracy. However, they only have a limited lifetime because undergo permanent degradation due to x-ray beam exposure. A transistor carbon nanotubes (CNTs), however, overcomes this drawback of degradation, it can be reset into its starting state after being exposed the beam. In work CNTs were deposited using dielectrophoresis method SiO2 coated p-type (boron-doped) Si substrates. For prepared devices best gate voltage shift 244 V Gy-1 and source-drain current sensitivity 382 nA achieved. These values are larger than those reached by currently used MOSFET devices.