Infrared spectroscopy of thin silicon dioxide on silicon
作者： J. E. Olsen , F. Shimura
DOI: 10.1063/1.100487
关键词:
摘要: An infrared technique has been devised to study the structure of very thin films on substrates high refractive index. Optical spectrum amplification three orders magnitude is theoretically available. A series index enhanced multiple internal reflection spectra reveals a clear thickness‐dependent structural transformation in thermal SiO2. The suggest shift ring statistics, from smaller larger, with increasing distance oxide‐silicon interface.
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