Thermal gate SiO2 for Ge metal-oxide-semiconductor capacitors fabricated on Si substrate
作者： Yung-Hsien Wu , Jia-Rong Wu , Min-Lin Wu
DOI: 10.1063/1.2776352
关键词:
摘要: With the Si substrate, a process to fabricate Ge metal-oxide-semiconductor (MOS) capacitors with thermally grown SiO2 as gate dielectric has been presented. The good crystallinity of epitaxial Ge, thermal oxide tiny content, and smooth interface between layer demonstrate eligibility for device operation. From electrical characterization MOS capacitors, enhanced constant without deteriorating leakage current hysteresis can be achieved by proper NH3 nitridation subsequent N2O treatment which shows high potential employed in fabrication performance field-effect transist.
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N. Wu, Q. Zhang, C. Zhu, D.S.H. Chan, A. Du, N. Balasubramanian, M.F. Li, A. Chin, J.K.O. Sin, D.-L. Kwong, A TaN-HfO/sub 2/-Ge pMOSFET with NovelSiH/sub 4/ surface passivation IEEE Electron Device Letters. ,vol. 25, pp. 631- 633 ,(2004) , 10.1109/LED.2004.833842
Minjoo L. Lee, C. W. Leitz, Z. Cheng, A. J. Pitera, T. Langdo, M. T. Currie, G. Taraschi, E. A. Fitzgerald, Dimitri A. Antoniadis, Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates Applied Physics Letters. ,vol. 79, pp. 3344- 3346 ,(2001) , 10.1063/1.1417515
Yung-Hsien Wu, Chia-Lin Ku, Jiun-Fang Wang, Boron-Retarded Gate Dielectric Formed by Dry Oxidation of Thermal Nitride Journal of The Electrochemical Society. ,vol. 151, ,(2004) , 10.1149/1.1628237
W. S. Liu, M. A. Nicolet, T. K. Carns, K. L. Wang, Epitaxial Ge layers on Si via Ge x Si 1−x O 2 reduction: the roles of the hydrogen partial pressure and the Ge content Journal of Electronic Materials. ,vol. 23, pp. 437- 440 ,(1994) , 10.1007/BF02671226
Takuya Sugawara, Yasuhiro Oshima, Raghavasimhan Sreenivasan, Paul C. McIntyre, Electrical properties of germanium/metal-oxide gate stacks with atomic layer deposition grown hafnium-dioxide and plasma-synthesized interface layers Applied Physics Letters. ,vol. 90, pp. 112912- ,(2007) , 10.1063/1.2472197
YH Wu, Albert Chin, None, Gate oxide integrity of thermal oxide grown on high temperature formed Si/sub 0.3/Ge/sub 0.7/ IEEE Electron Device Letters. ,vol. 21, pp. 113- 115 ,(2000) , 10.1109/55.823573
W. S. Liu, J. S. Chen, D. Y. C. Lie, M.‐A. Nicolet, Ge epilayer of high quality on a Si substrate by solid‐phase epitaxy Applied Physics Letters. ,vol. 63, pp. 1405- 1407 ,(1993) , 10.1063/1.109691
YH Wu, WJ Chen, Albert Chin, C Tsai, None, The effect of native oxide on epitaxial SiGe from deposited amorphous Ge on Si Applied Physics Letters. ,vol. 74, pp. 528- 530 ,(1999) , 10.1063/1.123176
D.S. Yu, K.C. Chiang, C.F. Cheng, A. Chin, C. Zhu, M.F. Li, D.-L. Kwong, Fully silicided NiSi:Hf-LaAlO/sub 3//SG-GOI n-MOSFETs with high electron mobility IEEE Electron Device Letters. ,vol. 25, pp. 559- 561 ,(2004) , 10.1109/LED.2004.832527
Chia Ching Yeo, Byung Jin Cho, F. Gao, S.J. Lee, M.H. Lee, C.-Y. Yu, C.W. Liu, L.J. Tang, T.W. Lee, Electron mobility enhancement using ultrathin pure Ge on Si substrate IEEE Electron Device Letters. ,vol. 26, pp. 761- 763 ,(2005) , 10.1109/LED.2005.855420