SEMICONDUCTOR MANUFACTURING APPARATUS AND MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要: PURPOSE:To reduce sticking of dust to a treated substrate and prevent lowering film-formation rate due residual by feeding activated cleaning gas through reaction induction line into container after forming desired thin film on the surface CVD method. CONSTITUTION:After 3 chemical be fed from introduction lines 15a 15b inside 1, is stopped exhausted followed carrying out film-formed load lock chamber connected container. Next, valve 11 for opened so as let flow activation means 12. Further, this introduced 1. Thereby, product remaining in removed.