Method for etching etching target layer

作者: Yoshiki Igarashi , Hiroshi Okada , Shin Hirotsu , Tomonori Miwa

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摘要: Disclosed is an etching method for target layer. The includes: a first step of depositing plasma reaction product on mask layer made organic film formed the layer; and after step, second includes coarse region in which plurality openings are formed, dense surrounding region. exists more densely than positioned close to compared In method, width becomes narrower

参考文章(26)
Kallol Bera, Paul Lukas Brillhart, Bruno Geoffrion, Bryan Pu, Xiaoye Zhao, Kenny L. Doan, Ezra Robert Gold, Daniel J. Hoffman, Plasma reactor apparatus with multiple gas injection zones having time-changing separate configurable gas compositions for each zone ,(2006)
Kallol Bera, Paul Lukas Brillhart, Bruno Geoffrion, Bryan Pu, Xiaoye Zhao, Kenny L. Doan, Ezra Robert Gold, Daniel J. Hoffman, Plasma etch process with separately fed carbon-lean and carbon-rich polymerizing etch gases in independent inner and outer gas injection zones ,(2006)
Mamoru Yakushiji, Tomoyuki Watanabe, Michikazu Morimoto, Tetsuo Ono, Plasma Etching Method ,(2014)
Wonchul Lee, Bryan Pu, Shenjian Liu, Qian Fu, Method for reducing microloading in etching high aspect ratio structures ,(2007)
Camelia Rusu, Tsuyoshi Aso, Inorganic rapid alternating process for silicon etch ,(2011)
Anne Le Gouil, Jeffrey R. Lindain, Yasushi Ishikawa, Yoko Yamaguchi-Adams, Etch process for 3d flash structures ,(2011)
Jeremiah T. Pender, Srinivas D. Nemani, Sergey G. Belostotskiy, Dmitry Lubomirsky, Qingjun Zhou, Method of patterning a low-k dielectric film ,(2013)
Chansyun David Yang, Liming Yang, Gene H. Lee, Method of controlling trench microloading using plasma pulsing ,(2010)