Method of patterning a low-k dielectric film
作者： Jeremiah T. Pender , Srinivas D. Nemani , Sergey G. Belostotskiy , Dmitry Lubomirsky , Qingjun Zhou
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摘要: Methods of patterning low-k dielectric films are described. In an example, a method film involves forming and mask layer above layer, the disposed substrate. The also modifying exposed portions with nitrogen-free plasma process. removing, remote process, modified selective to unmodified layer.
google.co.uk 参考文章(45)
Masayuki Kohno, Minoru Honda, Method for depositing silicon nitride film, computer-readable storage medium, and plasma cvd device ,(2011)
Robin Cheung, SiYi Li, Methods for post-etch deposition of a dielectric film ,(2006)
Tsukasa Abe, Y. Long He, Albert Kwok, Han-Ming Wu, Plasma etching uniformity control ,(2002)
Kazuo Takata, Satoshi Tani, Yutaka Kudou, Etching method and etching equipment ,(2008)
Khoi Doan, Jeremiah T. P. Pender, Yifeng Zhou, Srinivas D. Nemani, Method of removing a photoresist from a low-k dielectric film ,(2011)
Mohamed Boufnichel, Lawrence John Overzet, Thomas Tillocher, Remi Dussart, Pierre Ranson, Xavier Mellihaoui, Philippe Lefaucheux, Deep anisotropic silicon etch method ,(2008)
Kelvin Zin, Method of selectively etching an insulation stack for a metal interconnect ,(2010)
Shankar Venkataraman, Matthew L. Miller, Nitin K. Ingle, Xiaolin Chen, Jingmei Liang, Dielectric film growth with radicals produced using flexible nitrogen/hydrogen ratio ,(2010)
Kien N. Chuc, Qiwei Liang, Shankar Venkataraman, Matthew L. Miller, Xinglong Chen, Dmitry Lubomirsky, Jang-Gyoo Yang, Semiconductor processing system and methods using capacitively coupled plasma ,(2011)
Carlo Waldfried, Orlando Escorcia, Thomas Buckley, Qingyuan Han, Palanikumaran Sakthivel, Plasma ashing process ,(2001)