Non-linear high-frequency amplifier arrangement

摘要: The invention relates to a non-linear high-frequency amplifier arrangement (1) suitable for generating power outputs ≥ 1kW at frequencies of 1MHz the purpose plasma excitation, comprising: a. two LDMOS transistors (S1, S2) each connected by their source connection an earth point (5), wherein have same design and are arranged in assembly (package) (3), b. transformer (7) whose primary winding (6) is drain connections S2), c. signal transmitter (11) secondary (13) first end gate (15) one transistor (S1) second (17) other (S2), d. feedback path (34, 35) from (15, 17) S2).