High-frequency amplifier apparatuses

摘要: The invention relates to high-frequency amplifier apparatuses suitable for generating power outputs of at least 1 kW frequencies 2 MHz. include two LDMOS transistors each connected by their source connection ground. can have the same design and be arranged in an assembly (package). apparatus also includes a circuit board lying flat against metallic cooling plate plate, which ground, is on or board. transformer, whose primary winding drain connections transistors, signal transmitter. A secondary transmitter gate transistors. Each ground via one voltage-limiting structural element.