Auger lifetime in InAs, InAsSb, and InAsSb-InAlAsSb quantum wells
作者： J. R. Lindle , J. R. Meyer , C. A. Hoffman , F. J. Bartoli , G. W. Turner
DOI: 10.1063/1.115146
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摘要: … However, the development of light emitters which maintain low threshold currents and high … In each case the growth sequence consisted of a 0.2- m-thick GaAs buffer layer, a 1- m-thick …
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