Picosecond free-electron laser studies of Auger recombination in arsenic-rich InAs1–xSbx strained layer superlattices at 300 K
作者： C.M. Ciesla , M.J. Pullin , I. Galbraith , R.A. Stradling , C.J.G.M. Langerak
关键词: Auger effect 、 Electronic band structure 、 Band gap 、 Excited state 、 Picosecond 、 Analytical chemistry 、 Materials science 、 Auger 、 Molecular physics 、 Superlattice 、 Excitation
摘要: Room temperature pump-probe transmission experiments have been performed on arsenic-rich InAs/InAs/sub 1-x/Sb/sub x/ strained layer superlattices (SLS) using a picosecond far-infrared free electron laser. With excitation frequencies well above the fundamental bandgap, near 10 /spl mu/m, large excited carrier concentrations were obtained, allowing density dependence of recombination rate to be determined directly. The results interpreted in terms an 8/spl times/8 (k.p) SLS energy band calculation, including full dispersion for both k in-plane and parallel growth direction. A comparison with identical measurements epilayers InSb, comparable room shows that Auger processes substantially suppressed superlattices, In non-degenerate regime, where lifetime scales as tau//sub aug//sup -1/=C/sub 1/N/sub e//sup 2/ value C/sub 1/ between 100 times smaller is obtained structures.
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sci-hub.se 参考文章(15)
M.H. Weiler, Chapter 3 Magnetooptical Properties of Hg1-x Cdx Te Alloys Defects, (HgCd)Se, (HgCd)Te. ,vol. 16, pp. 119- 191 ,(1981) , 10.1016/S0080-8784(08)60130-1
S N Smith, C C Phillips, R H Thomas, R A Stradling, I T Ferguson, A G Norman, B N Murdin, C R Pidgeon, Interband magneto-optics of InAs1−xSbx Semiconductor Science and Technology. ,vol. 7, pp. 900- 906 ,(1992) , 10.1088/0268-1242/7/7/005
Albert Haug, Carrier density dependence of Auger recombination Solid-State Electronics. ,vol. 21, pp. 1281- 1284 ,(1978) , 10.1016/0038-1101(78)90193-4
A R Beattie, Auger transitions in semiconductors and their computation Journal of Physics C: Solid State Physics. ,vol. 18, pp. 6501- 6515 ,(1985) , 10.1088/0022-3719/18/35/015
S. R. Kurtz, R. M. Biefeld, Magnetophotoluminescence of biaxially compressed InAsSb quantum wells Applied Physics Letters. ,vol. 66, pp. 364- 366 ,(1995) , 10.1063/1.114214
M. E. Flatté, C. H. Grein, H. Ehrenreich, R. H. Miles, H. Cruz, Theoretical performance limits of 2.1–4.1 μm InAs/InGaSb, HgCdTe, and InGaAsSb lasers Journal of Applied Physics. ,vol. 78, pp. 4552- 4559 ,(1995) , 10.1063/1.359798
J. R. Lindle, J. R. Meyer, C. A. Hoffman, F. J. Bartoli, G. W. Turner, H. K. Choi, Auger lifetime in InAs, InAsSb, and InAsSb-InAlAsSb quantum wells Applied Physics Letters. ,vol. 67, pp. 3153- 3155 ,(1995) , 10.1063/1.115146
E. R. Youngdale, J. R. Meyer, C. A. Hoffman, F. J. Bartoli, C. H. Grein, P. M. Young, H. Ehrenreich, R. H. Miles, D. H. Chow, AUGER LIFETIME ENHANCEMENT IN INAS-GA1-XINXSB SUPERLATTICES Applied Physics Letters. ,vol. 64, pp. 3160- 3162 ,(1994) , 10.1063/1.111325
Auger effect in semiconductors Proc. Roy. Soc. (London). ,vol. 249, pp. 16- 29 ,(1959) , 10.1098/RSPA.1959.0003
J.M Auerhammer, A.F.G van der Meer, P.W van Amersfoort, Q.H.F Vrehen, E.R Eliel, Efficient frequency doubling of ps-pulses from a free-electron laser in ZnGeP2☆ Optics Communications. ,vol. 118, pp. 85- 89 ,(1995) , 10.1016/0030-4018(95)00230-6