Theoretical Evaluation of Semiconductor Loss Components Behavior in ISOP-DAB Converters
作者： Hamzeh Beiranvand , Esmaeel Rorok , Marco Liserre
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摘要: Input-Series Output-Parallel (ISOP) connected Dual-Active-Bridges (DABs) form an interesting topology which enable step down MVDC to LVDC by employing medium frequency transformers. Si-IGBT semiconductor devices are commonly used in power distribution grid applications such as Smart Transformers (STs) where both and energy ports can be presented. In this paper, loss components conduction, switching gate driver losses behavior theoretically evaluated a wide range of blocking voltage, phase-shift angle DAB converters. addition, approximated continuous function voltage based on available datasheets. The the analyzed for two 50 500 kW ISOP-DAB converters DC ratio is 10 kV/400V.
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