Floating gate MOSFET based Operational Transconductance Amplifier and study of mismatch

作者: V. Suresh Babu , Ambika Sekhar , Devi R. Salini , M. R. Baiju

DOI: 10.1109/ICIEA.2009.5138183

关键词:

摘要: This paper presents an Operational Transconductance Amplifier realized using Floating Gate MOSFETs only. can be used as Neuron Activation Function with wide linear range and adaptable threshold level slope. circuit is suitable for analog signal processing neural network applications. generates log sigmoid tan NAF functions simultaneously. In this the parameters of function easily changed by changing voltage at control gate FGMOSFET. The proposed FGMOSFET based OTA large equal to 2V a power supply +0.75V. Power analysis noise performed. Mismatch study performed Monte Carlo simulation. TSPICE simulation results 2µm N-well process are presented. Layout design done L-Edit in Tanner Tool.

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