Vertical GaN-based LED and method of manufacturing the same
作者： Hee Seok Choi , Jeong Tak Oh , Jae Hoon Lee , Su Yeol Lee
DOI:
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摘要: Provided are a vertical GaN-based LED and method of manufacturing the same. The includes an n-electrode. An AlGaN layer is formed under undoped GaN to provide two-dimensional electron gas junction interface layer. A structure n-type layer, active p-type that sequentially p-electrode structure. conductive substrate p-electrode.
lens.org 参考文章(8)
Hideto Sugawara, Nitride based semiconductor light-emitting device and method of manufacturing the same ,(2003)
Mototaka Taneya, Atsushi Ogawa, Yuhzoh Tsuda, Yoshihiro Ueta, Takayuki Yuasa, Masahiro Araki, III-N compound semiconductor device ,(2000)
Heng Liu, Light-emitting diode with silicon carbide substrate ,(2003)
Sang Youl Lee, Nitride semiconductor light emitting device and method of manufacturing the same ,(2009)
Fred A. Kish, Michael R. Krames, Ordered interface texturing for a light emitting device ,(1996)
Konstantin V. Vassilevski, Audrey E. Nikolaev, Yuri V. Melnik, Vladimir A. Dmitriev, P-n heterojunction-based structures utilizing HVPE grown III-V compound layers Newcastle University. ,(2001)
Hong K. Choi, High-efficiency light-emitting diodes ,(2003)
康二 大塚, Koji Otsuka, Masahiro Sato, 雅裕 佐藤, 秀和 青柳, Hidekazu Aoyanagi, Semiconductor light emitting element and its manufacturing method ,(2004)