Laser annealing of GaN LEDs with reduced pattern effects
作者： Andrew M. Hawryluk , Yun Wang
DOI:
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摘要: The disclosure is directed to laser annealing of GaN light-emitting diodes (LEDs) with reduced pattern effects. A method includes forming elongate conductive structures atop either an n-GaN layer or a p-GaN LED structure, the having long and short dimensions, being spaced apart substantially aligned in dimensions. also generating P-polarized anneal beam that has wavelength greater than dimension. irradiating structure through beam, including directing relative so polarization direction perpendicular dimension structures.
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