Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors.

摘要: We investigated the influence of low-concentration indium (In) doping on chemical and structural properties solution-processed zinc oxide (ZnO) films electrical characteristics bottom-gate/top-contact In-doped ZnO thin-film transistors (TFTs). The thermogravimetry differential scanning calorimetry analysis results showed that thermal annealing at 400 °C for 40 min produces films. As In content was increased from 1% to 9%, metal-oxygen bonding 5.56% 71.33%, while metal-hydroxyl decreased 72.03% 9.63%. X-ray diffraction peaks field-emission microscope images with different concentrations revealed a better crystalline quality reduced grain size thin thickness also when up 5%; however, further increasing content. field-effect mobility on/off current ratio TFTs were notably affected by any change in concentration. Considering overall TFT performance, optimal concentration semiconductor determined be 5% this study. These suggest incorporation is crucial modulating morphological performance.