Numerical simulation of current crowding phenomena and their effects on electromigration in very large scale integration interconnects

摘要: Two types of current crowding structures were simulated in this work. In each structure, both the pattern and magnitude associated density gradient examined. Factors like line width, curvature, conductivity, which affect behavior, analyzed. The numerical gradient, changes to a driving force when potential is defined, was found be high enough atomic rearrangement during electromigration. It induces void formation low region an interconnect, it causes precipitates link together rather than ripen two-phase alloy. Also, we that as width scales down, effects become more significant.