Electrical conductance simulation of two-dimensional directional site percolated networks for porous silicon structures

摘要: Two-dimensional porous silicon structures were modeled as two-dimensional directional site percolated networks (2D-DSPNs). In the present work, 2D-DSPNs resistive networks, and electrical conductance values numerically calculated. The effects of porosity geometrical connection on conduction behavior isolated identified. It was shown that makes distinctly different from in traditional random networks. A geometry anisotropic walk model developed to microscopically understand macroscopic 2D-DSPNs.