Improvement of interface quality by post-annealing on silicon nanowire MOSFET devices with multi-wire channels
作者： Seonghyun Kim , Minseok Jo , Seungjae Jung , Hyejung Choi , Joonmyoung Lee
DOI: 10.1016/J.MEE.2010.11.011
关键词:
摘要: We have investigated the passivation effects of high-pressure hydrogen annealing (HPHA) on silicon nanowire (Si NW) metal oxide semiconductor field effect transistors (MOSFETs) with multi-wire channels. Compared to conventional forming gas (FGA) process, results show that HPHA can significantly improve device performance parameters such as threshold voltage, subthreshold slope, mobility, and ION/IOFF ratio. This enhancement is attributed effective interface traps between SiO2 Si NW channel. Therefore, be a promising process for implementation MOSFET.
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