作者: Fu-Liang Yang , Hao-Yu Chen , Fang-Cheng Chen , Cheng-Chuan Huang , Chang-Yun Chang
DOI: 10.1109/IEDM.2002.1175826
关键词:
摘要: Low leakage and low active-power 25 nm gate length C-MOSFETs are demonstrated for the first time with a newly proposed Omega-(/spl Omega/) shaped structure, at a conservative 17…