Investigations on Transport Properties of Poly-silicon Nanowire Transistors Featuring Independent Double-Gated Configuration Under Cryogenic Ambient
作者： Wei-Chen Chen , Horng-Chih Lin
DOI: 10.1007/978-3-319-02021-1_9
关键词:
摘要: Transport properties of poly-Si nanowire transistors, which were fabricated by a simple and low-cost method, are examined in this chapter. The proposed device features two …
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