A scanning Kelvin probe for synchrotron investigations: The in situ detection of radiation-induced potential changes

摘要: A wide range of high-performance X-ray surface/interface characterization techniques are implemented nowadays at every synchrotron radiation source. However, these not always `non-destructive' because possible beam-induced electronic or structural changes may occur during irradiation. As be least partially reversible, an in situ technique is required for assessing their extent. Here the integration a scanning Kelvin probe (SKP) set-up with hard interface scattering instrument detection work function variations resulting from irradiation reported. First results, obtained on bare sapphire and covered by room-temperature ionic liquid, presented. In both cases potential change was detected, which decayed vanished after switching off beam. This demonstrates usefulness SKP monitoring potentials materials experiments.