Self-limiting growth when using trimethyl bismuth (TMBi) in the metal-organic vapor phase epitaxy (MOVPE) of GaAs1−yBiy

摘要: Abstract Theoretical and experimental studies have confirmed that the GaAs1−yBiy semiconductor alloy system has potential for long wavelength applications devices with improved performance over other materials emitting at similar wavelengths. The growth of by metal-organic vapor phase epitaxy (MOVPE) remains a challenge; bismuth is not easily incorporated into GaAs matrix due large difference in electronegativity covalent radii between As Bi. These differences often lead to Bi surface segregation or very low incorporation rates matrix. We studied quantum well structures using trimethyl as source. A reduced rate observed increasing precursor flux reactor. Additionally, an increase time Bi-containing layer temperatures does corresponding thickness, which indicative near self-limiting growth. Complex compositional profiles deduced from combining x-ray diffraction analysis transmission electron microscopy investigations are used develop phenomenological model MOVPE heterostructures includes complex interplay chemical species. presence methyl-terminated surface, associated use Bi, particularly temperatures, leads effective “site blocking” inhibiting hetero-structures.