Growth of high Bi concentration GaAs1−xBix by molecular beam epitaxy
作者： R. B. Lewis , M. Masnadi-Shirazi , T. Tiedje
DOI: 10.1063/1.4748172
关键词:
摘要: The incorporation of Bi is investigated in the molecular beam epitaxy growth GaAs1−xBix. content increases rapidly as As2:Ga flux ratio lowered to 0.5 and then saturates for lower ratios. Growth under Ga rich conditions shows that strongly with decreasing temperature. A model proposed where from a wetting layer incorporates through attachment Ga-terminated surface sites. weak Ga-Bi bond can be broken thermally, ejecting back into layer. Highly crystalline films up 22% were grown at temperatures low 200 °C.
scitation.org
harvard.edu
aip.org 
sci-hub.se 参考文章(13)
X. Lu, D. A. Beaton, R. B. Lewis, T. Tiedje, M. B. Whitwick, Effect of molecular beam epitaxy growth conditions on the Bi content of GaAs1−xBix Applied Physics Letters. ,vol. 92, pp. 192110- ,(2008) , 10.1063/1.2918844
S. Tixier, M. Adamcyk, T. Tiedje, S. Francoeur, A. Mascarenhas, Peng Wei, F. Schiettekatte, Molecular beam epitaxy growth of GaAs1−xBix Applied Physics Letters. ,vol. 82, pp. 2245- 2247 ,(2003) , 10.1063/1.1565499
K. Bertulis, A. Krotkus, G. Aleksejenko, V. Pačebutas, R. Adomavičius, G. Molis, S. Marcinkevičius, GaBiAs: A material for optoelectronic terahertz devices Applied Physics Letters. ,vol. 88, pp. 201112- ,(2006) , 10.1063/1.2205180
M Masnadi-Shirazi, DA Beaton, RB Lewis, Xianfeng Lu, T Tiedje, None, Surface reconstructions during growth of GaAs1−xBix alloys by molecular beam epitaxy Journal of Crystal Growth. ,vol. 338, pp. 80- 84 ,(2012) , 10.1016/J.JCRYSGRO.2011.09.055
J Ralston, GW Wicks, LF Eastman, Reflection high-energy electron diffraction intensity oscillation study of Ga desorption from molecular beam epitaxially grown AlxGa1−xAs Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 4, pp. 594- 597 ,(1986) , 10.1116/1.583383
Ch. Heyn, M. Harsdorff, Simulation of GaAs growth and surface recovery with respect to galliumand arsenic surface kinetics Physical Review B. ,vol. 55, pp. 7034- 7038 ,(1997) , 10.1103/PHYSREVB.55.7034
E.C. Young, S. Tixier, T. Tiedje, Bismuth surfactant growth of the dilute nitride GaNxAs1−x Journal of Crystal Growth. ,vol. 279, pp. 316- 320 ,(2005) , 10.1016/J.JCRYSGRO.2005.02.045
A.J. Ptak, R. France, D.A. Beaton, K. Alberi, J. Simon, A. Mascarenhas, C.-S. Jiang, Kinetically limited growth of GaAsBi by molecular-beam epitaxy Journal of Crystal Growth. ,vol. 338, pp. 107- 110 ,(2012) , 10.1016/J.JCRYSGRO.2011.10.040
V.V Preobrazhenskii, M.A Putyato, O.P Pchelyakov, B.R Semyagin, Experimental determination of the incorporation factor of As4 during molecular beam epitaxy of GaAs Journal of Crystal Growth. ,vol. 201202, pp. 170- 173 ,(1999) , 10.1016/S0022-0248(98)01308-6
R. Kaspi, S.A. Barnett, Analysis of GaAs(001) surface stoichiometry using Monte Carlo simulations Surface Science. ,vol. 241, pp. 146- 156 ,(1991) , 10.1016/0039-6028(91)90219-I