GaAs1−yBiy Raman signatures: illuminating relationships between the electrical and optical properties of GaAs1−yBiy and Bi incorporation
作者： Jincheng Li , Kamran Forghani , Yingxin Guan , Wenyuan Jiao , Wei Kong
DOI: 10.1063/1.4922139
关键词:
摘要: We report the use of two Raman signatures, Bi-induced longitudinal-optical-plasmon-coupled (LOPC) mode and GaAs Frohlich scattering intensity, present in nominally undoped (100) GaAs1−yBiy to predict 300K photoluminescence intensity Bi composition (y) GaAs1−yBiy. The LOPC is used calculate hole concentration epitaxial layers. A linear relationship between found for a range samples grown at various temperatures growth rates. In addition, also be linearly related intensity.
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