Method and arrangement for the determination of the thermal resistance of IGBT components
作者： Reinhold Dipl Ing Dr Bayerer , Johannes Dipl In Teigelkoetter
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摘要: It is the object of invention to specify a method and measuring device for determination internal thermal resistance transient IGBTs (insulated gate bipolar transistors), which also permits measurement on with reverse-connected parallel diode. This achieved by means in collector-emitter voltage IGBT measured before after defined power pulse as well detecting cooling curve pulse, specifically at specific time intervals. The methods can be carried out connected computer. solution according used testing modules.
lens.org 参考文章(3)
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