作者: E. Peytavit , S. Arscott , D. Lippens , G. Mouret , P. Masselin
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摘要: We report on the development of an-ultra-broad band photoconductive detector, based low-temperature-grown GaAs, vertically-integrated with terahertz spiral antennas. Velocity overshoot was expected in photo-response facing dramatic decrease conversion efficiency due to a very short carrier lifetime. Photomixing experiments two optical 0.8 /spl mu/m laser beating shows 3-dB bandwidth 700 GHz radiation power at frequency 0.1 mu/W under moderate pumping and bias voltages. Preliminary results are also reported long wavelengths taking advantage sub-gap absorption tail for non-annealed samples.