The γ-decay of the 1g92 and 2p inner-hole states in 111Sn via the 112Sn(3He, αγ) reaction at 32 MeV
作者： F Azaiez , S Fortier , S Gales , E Hourani , JM Maison
DOI: 10.1016/0375-9474(85)90458-0
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摘要: Abstract The γ-decay of the deeply-bound hole states in 111Sn has been investigated at 32 MeV incident energy by means 112Sn(3He, αγ) reaction. α-particles emitted near 0° were detected a Si counter located image plan superconducting solenoidal spectrometer SOLENO. γ-rays coincidence with two Ge(Li) detectors 90° and 142° respect to beam direction, respectively. Energies, spins decay schemes have established for low-lying up 2.5 excitation 111Sn. broad bump, around 4.2 previously attributed neutron pick-up from inner 1 g 9 2 , p 3 neutron. Subshells, reveals importance quasiparticle-phonon m spreading mechanism inner-hole strengths. 2p strength functions deduced α-decay enhanced structures (3 ≦ Ex≦ 8 MeV). They are compared ones measured previous inclusive experiments those calculated framework nuclear model.
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