DOI: 10.1007/S10854-014-2148-Z
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摘要: The influence of carbon and silicon atoms doping on the structural electronic properties (GeC)12 nanocluster is investigated through density functional theory calculations. Moreover responses both pristine doped nanoclusters are scrutinized under electric fields with strengths 0–100 × 10−4 a.u. variations energy gap electrophilicity index by increasing field strength also investigated. It shown that considered clusters nearly insensitive to applied they stable molecules over entire range external fields. Therefore it seems could be promising candidates for nanoelectronic applications.