Analysis of the biaxial strain state of Al-doped c-BN films using diffraction experiments with synchrotron radiation

摘要: Abstract Thin films of cubic-boron nitride with a small amount aluminum were produced by rf magnetron sputtering h-BN target and an additional Al ring-shaped electrode. Then the strain state biaxially stressed was measured using synchrotron X-ray diffraction lattice spacing that unstressed would have calculated for different amounts aluminum. This gets larger increasing Al-amount. There is much evidence atoms are substitutionally incorporated at boron sites. article provides insight into method determining slightly changed sin 2 Ψ method.