Electrical characteristics of an organic bistable device using an Al/Alq3/nanostructured MoO3/Alq3/p+-Si structure
作者： Tzu-Yueh Chang , You-Wei Cheng , Po-Tsung Lee
DOI: 10.1063/1.3299265
关键词:
摘要: The electrical properties of a device with an Al/Alq3/nanostructured MoO3/Alq3/p+-Si structure were investigated for organic resistance switching memories. conductance the can be electrically switched to either high or low conductance. bistable is attributed MoO3 nanoclusterlike layer interposed between Alq3 thin films. When was conductance, space-charge field dominated carrier transportation device. resulted from charges trapped in layer. Both retention measurement and write-read-erase-read cycles are also provided.
scitation.org
nctu.edu.tw
harvard.edu
aip.org参考文章(25)
Chen Tao, Guohua Xie, Caixia Liu, Xindong Zhang, Wei Dong, Fanxu Meng, Xiangzi Kong, Liang Shen, Shengping Ruan, Weiyou Chen, Semitransparent inverted polymer solar cells with MoO3/Ag/MoO3 as transparent electrode Applied Physics Letters. ,vol. 95, pp. 053303- ,(2009) , 10.1063/1.3196763
D. W. Zhao, X. W. Sun, C. Y. Jiang, A. K. K. Kyaw, G. Q. Lo, D. L. Kwong, Efficient tandem organic solar cells with an Al/MoO3 intermediate layer Applied Physics Letters. ,vol. 93, pp. 083305- ,(2008) , 10.1063/1.2976126
Ajit Kumar Mahapatro, Ruchi Agrawal, Subhasis Ghosh, None, Electric-field-induced conductance transition in 8-hydroxyquinoline aluminum (Alq3) Journal of Applied Physics. ,vol. 96, pp. 3583- 3585 ,(2004) , 10.1063/1.1778211
Chia-Hsun Tu, Dim-Lee Kwong, Yi-Sheng Lai, Negative differential resistance and electrical bistability in nanocrystal organic memory devices Applied Physics Letters. ,vol. 89, pp. 252107- ,(2006) , 10.1063/1.2409366
Jianyong Ouyang, Chih-Wei Chu, Charles R. Szmanda, Liping Ma, Yang Yang, Programmable polymer thin film and non-volatile memory device Nature Materials. ,vol. 3, pp. 918- 922 ,(2004) , 10.1038/NMAT1269
Fushan Li, Dong-Ick Son, Jung-Hun Ham, Bong-Jun Kim, Jae Hun Jung, Tae Whan Kim, Memory effect of nonvolatile bistable devices based on CdSe∕ZnS nanoparticles sandwiched between C60 layers Applied Physics Letters. ,vol. 91, pp. 162109- ,(2007) , 10.1063/1.2801357
Jianyong Ouyang, Chih-Wei Chu, Douglas Sieves, Yang Yang, Electric-field-induced charge transfer between gold nanoparticle and capping 2-naphthalenethiol and organic memory cells Applied Physics Letters. ,vol. 86, pp. 123507- ,(2005) , 10.1063/1.1887819
Guohua Xie, Yanlong Meng, Fengmin Wu, Chen Tao, Dandan Zhang, Mingjun Liu, Qin Xue, Wen Chen, Yi Zhao, Very low turn-on voltage and high brightness tris-(8-hydroxyquinoline) aluminum-based organic light-emitting diodes with a MoOx p-doping layer Applied Physics Letters. ,vol. 92, pp. 093305- ,(2008) , 10.1063/1.2890490
R. S. Potember, T. O. Poehler, D. O. Cowan, Electrical switching and memory phenomena in Cu‐TCNQ thin films Applied Physics Letters. ,vol. 34, pp. 405- 407 ,(1979) , 10.1063/1.90814
K YOOK, S JEON, C JOO, J LEE, S KIM, J JANG, Organic bistable memory device using MoO3 nanocrystal as a charge trapping center Organic Electronics. ,vol. 10, pp. 48- 52 ,(2009) , 10.1016/J.ORGEL.2008.10.002