作者: Hun Min Park , Dong Yeol Yun , Sang Wook Kim , Tae Whan Kim
关键词:
摘要: Organic bistable devices (OBDs) with CuInS2 (CIS) quantum dots (QDs) embedded in a poly(N-vinylcarbazole) (PVK) layer were fabricated by spin coating. Current–voltage (I–V) curves of Al/colloidal hybrid CIS QD-PVK/indium tin oxide at 300 K showed that the current bistability an ON/OFF ratio 1×103 is larger than OBDs without QDs. The number retention cycles ON and OFF states for was above 1×105. carrier transport mechanisms described on basis I–V results.