作者: J. Oswald , M. Oswald
DOI: 10.1103/PHYSREVB.74.153315
关键词:
摘要: In a preceding paper [Phys. Rev. B 72, 035334 (2005)], experimental results for the so-called ``anti-Hall bar within Hall bar'' configuration have been compared with numerical simulations high magnetic field regime. The sample structure is doubly connected, double-boundary electronic system that has experimentally investigated by Mani. application of network model magnetotransport allows us to evaluate longitudinal and voltages in this geometry. Thus, our model, we rebuild configuration, including geometry two independent floating current sources. extend calculations low regime, where quantum effect not yet established. Like realize at both inner outer boundaries behave excellent agreement Mani's experiments. We find (anti-Hall bar) (Hall depend just on individual injected via corresponding boundary, while voltage depends exactly sum currents.