A low power 20-GHz low-noise amplifier fabricated using 0.18-μm CMOS technology

作者: J.-X. Liu , H.-C. Kuo , Y.-K. Chu , J.-F. Yeh , H.-R. Chuang

DOI: 10.1002/MOP.24098

关键词:

摘要: A 20-GHz CMOS low-noise amplifier (LNA) fabricated with the 0.18 μm process is presented. This two-stage cascaded common source LNA exhibits low power consumption a satisfying performance such as overall gain and noise figure (NF). The measurement performed on-wafer. has demonstrated 9.3 dB gain, 4.4 NF, −10 dBm input P1dB, 0.65 IIP3. 9.6 mW from 1.2 V supply. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 423–426, 2009; Published online in InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24098

参考文章(7)
S.P. Voinigescu, T.O. Dickson, R. Beerkens, I. Khalid, P. Westgaard, A comparison of Si CMOS, SiGe BiCMOS, and InP HBT technologies for high-speed and millimeter-wave ICs topical meeting on silicon monolithic integrated circuits in rf systems. pp. 111- 114 ,(2004) , 10.1109/SMIC.2004.1398180
Kyung-Wan Yu, Yin-Lung Lu, Da-Chiang Chang, V. Liang, M.F. Chang, K-band low-noise amplifiers using 0.18 /spl mu/m CMOS technology IEEE Microwave and Wireless Components Letters. ,vol. 14, pp. 106- 108 ,(2004) , 10.1109/LMWC.2004.825175
X. Guan, A. Hajimiri, A 24-GHz CMOS front-end IEEE Journal of Solid-state Circuits. ,vol. 39, pp. 368- 373 ,(2004) , 10.1109/JSSC.2003.821783
D.K. Shaeffer, T.H. Lee, A 1.5-V, 1.5-GHz CMOS low noise amplifier IEEE Journal of Solid-state Circuits. ,vol. 32, pp. 745- 759 ,(1997) , 10.1109/4.568846
S.-C. Shin, Ming-Da Tsai, Ren-Chieh Liu, K.-Y. Lin, Huei Wang, A 24-GHz 3.9-dB NF low-noise amplifier using 0.18 /spl mu/m CMOS technology IEEE Microwave and Wireless Components Letters. ,vol. 15, pp. 448- 450 ,(2005) , 10.1109/LMWC.2005.851552
Mingquan Bao, H. Jacobsson, L. Aspemyr, A. Mercha, G. Carchon, A 20 GHz sub-1V low noise amplifier and a resistive mixer in 90 nm CMOS technology asia pacific microwave conference. ,vol. 5, pp. 1- 4 ,(2005) , 10.1109/APMC.2005.1607067