作者: J.-X. Liu , H.-C. Kuo , Y.-K. Chu , J.-F. Yeh , H.-R. Chuang
DOI: 10.1002/MOP.24098
关键词:
摘要: A 20-GHz CMOS low-noise amplifier (LNA) fabricated with the 0.18 μm process is presented. This two-stage cascaded common source LNA exhibits low power consumption a satisfying performance such as overall gain and noise figure (NF). The measurement performed on-wafer. has demonstrated 9.3 dB gain, 4.4 NF, −10 dBm input P1dB, 0.65 IIP3. 9.6 mW from 1.2 V supply. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 423–426, 2009; Published online in InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24098