A comparison of Si CMOS, SiGe BiCMOS, and InP HBT technologies for high-speed and millimeter-wave ICs
作者： S.P. Voinigescu , T.O. Dickson , R. Beerkens , I. Khalid , P. Westgaard
DOI: 10.1109/SMIC.2004.1398180
关键词: MOSFET 、 Broadband 、 Integrated injection logic 、 Integrated circuit 、 Heterojunction bipolar transistor 、 Extremely high frequency 、 Optoelectronics 、 Materials science 、 CMOS 、 BiCMOS
摘要: … simultaneous fT and fMAX values exceeding 150 GHz. At the … , the optimum FMIN bias, approximately 0.13 mA/µm, is close … the 130-nm SiGe BiCMOS technology node, designers can …
toronto.edu
sci-hub.se 参考文章(12)
D. Yamazaki, T. Yamamoto, M. Horinakal, H. Nomura, K. Hashimoto, H. Onodera, A 25GHz clock buffer and a 50Gb/s 2:1 selector in 90nm CMOS international solid-state circuits conference. pp. 240- 525 ,(2004) , 10.1109/ISSCC.2004.1332683
S. Reynolds, B. Floyd, U. Pfeiffer, T. Zwick, 60GHz transceiver circuits in SiGe bipolar technology international solid-state circuits conference. pp. 442- 538 ,(2004) , 10.1109/ISSCC.2004.1332784
Y. Suzuki, Z. Yamazaki, Y. Amamiya, S. Wada, H. Uchida, C. Kurioka, S. Tanaka, H. Hida, 120-Gb/s multiplexing and 110-Gb/s demultiplexing ICs IEEE Journal of Solid-state Circuits. ,vol. 39, pp. 2397- 2402 ,(2004) , 10.1109/JSSC.2004.835647
H. Tran, F. Pera, D.S. McPherson, D. Viorel, S.P. Voinigescu, 6-k/spl Omega/ 43-Gb/s differential transimpedance-limiting amplifier with auto-zero feedback and high dynamic range IEEE Journal of Solid-state Circuits. ,vol. 39, pp. 1680- 1689 ,(2004) , 10.1109/JSSC.2004.833547
G. Freeman, B. Jagannathan, Shwu-Jen Jeng, J. Rieh, A.D. Stricker, D.C. Ahlgren, S. Subbanna, Transistor design and application considerations for >200-GHz SiGe HBTs IEEE Transactions on Electron Devices. ,vol. 50, pp. 645- 655 ,(2003) , 10.1109/TED.2003.810467
Y. Baeyens, Y.K. Chen, A monolithic integrated 150 GHz SiGe HBT push-push VCO with simultaneous differential V-band output international microwave symposium. ,vol. 2, pp. 877- 880 ,(2003) , 10.1109/MWSYM.2003.1212509
T.O. Dickson, R. Beerkens, S.P. Voinigescu, A 2.5-V, 40-Gb/s decision circuit using SiGe BiCMOS logic symposium on vlsi circuits. ,vol. 40, pp. 206- 209 ,(2004) , 10.1109/VLSIC.2004.1346560
S.P. Voinigescu, M. Tazlauanu, P.C. Ho, M.T. Yang, Direct extraction methodology for geometry-scalable RF-CMOS models international conference on microelectronic test structures. pp. 235- 240 ,(2004) , 10.1109/ICMTS.2004.1309486
P. Westergaard, T.O. Dickson, S.P. Voinigescu, A 1.5V 20/30 Gb/s CMOS backplane driver with digital pre-emphasis custom integrated circuits conference. pp. 23- 26 ,(2004) , 10.1109/CICC.2004.1358724
S. P. VOINIGESCU, D. S. McPHERSON, F. PERA, S. SZILAGYI, M. TAZLAUANU, H. TRAN, A COMPARISON OF SILICON AND III–V TECHNOLOGY PERFORMANCE AND BUILDING BLOCK IMPLEMENTATIONS FOR 10 AND 40 Gb/s OPTICAL NETWORKING ICs International Journal of High Speed Electronics and Systems. ,vol. 13, pp. 27- 57 ,(2003) , 10.1142/S012915640300151X