Evaluating PtSi front contact to surface barrier detectors

作者: S. Petersson , E. Mgbenu , H. Norde , P.A. Tove

DOI: 10.1016/0029-554X(77)90242-7

关键词:

摘要: Abstract The rectifying front contact of Si surface barrier detectors is usually an evaporated Au film. properties this may not be optimal in three respects: (a) stability against changing ambient conditions, (b) window thickness and (c) current injection properties. Results are presented measurements made on PtSi contacts, as alternative. We find that while the leakage currents (including temperature dependence) ultimate resolution comparable with typical AunSi results, PtSiSi system less sensitive to touching, has possibilities for small thickness. It suggested some applications, can a viable alternative Au, nuclear radiation detectors, well light detectors.

参考文章(28)
F. S. Goulding, D. A. Landis, B. V. Jarrett, J. M. Jaklevic, Detector Background and Sensitivity of Semiconductor X-Ray Fluorescence Spectrometers Advances in x-ray analysis. ,vol. 15, pp. 470- 482 ,(1971) , 10.1007/978-1-4613-9966-7_36
A. G. Milnes, D. L. Feucht, Heterojunctions and Metal Semiconductor Junctions ,(1972)
W.K. Chu, J.W. Mayer, M-A. Nicolet, T.M. Buck, G. Amsel, F. Eisen, Principles and applications of ion beam techniques for the analysis of solids and thin films Thin Solid Films. ,vol. 17, pp. 1- 41 ,(1973) , 10.1016/0040-6090(73)90002-3
R. W. Bower, J. W. Mayer, Growth Kinetics Observed in the Formation of Metal Silicides on Silicon Applied Physics Letters. ,vol. 20, pp. 359- 361 ,(1972) , 10.1063/1.1654186
M. Beguwala, C. R. Crowell, Determination of hafnium‐p‐type silicon Schottky barrier height Journal of Applied Physics. ,vol. 45, pp. 2792- 2794 ,(1974) , 10.1063/1.1663673
P.A. Tove, S.A. Hyder, G. Susila, Diode characteristics and edge effects of metal-semiconductor diodes Solid-State Electronics. ,vol. 16, pp. 513- 521 ,(1973) , 10.1016/0038-1101(73)90191-3
J. M. Shannon, Reducing the effective height of a Schottky barrier using low‐energy ion implantation Applied Physics Letters. ,vol. 24, pp. 369- 371 ,(1974) , 10.1063/1.1655220
R. I. Ewing, Response of Silicon Surface Barrier Detectors to Hydrogen Ions of Energies 25 to 250 KEV Ire Transactions on Nuclear Science. ,vol. 9, pp. 207- 210 ,(1962) , 10.1109/TNS2.1962.4315995
E. Elad, C. N. Inskeep, R. A. Sareen, P. Nestor, Dead Layers in Charged-Particle Detectors IEEE Transactions on Nuclear Science. ,vol. 20, pp. 534- 544 ,(1973) , 10.1109/TNS.1973.4326959