Determination of hafnium‐p‐type silicon Schottky barrier height
作者： M. Beguwala , C. R. Crowell
DOI: 10.1063/1.1663673
关键词: Optics 、 Hafnium 、 Materials science 、 Metal–semiconductor junction 、 Schottky effect 、 Silicon 、 Condensed matter physics 、 Schottky barrier 、 P type silicon
摘要: The Schottky barrier height for holes in hafnium (Hf)‐p‐type silicon junctions was determined to be 0.58±0.02 eV by current‐voltage, capacitance‐voltage, and photothreshold techniques. here does not agree with the earlier reported value of 0.90 Saxena. We have shown that interface effects can account only minor changes—viz., 0.02 our value. reasons discrepancy Saxena's are fully understood, but results consistent those expected from conventional models.
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